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FGPF30N45TTU

Part No FGPF30N45TTU
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 450V 50.4W TO220F / IGBT Trench 450 V 50.4 W Through Hole TO-220F-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 450 V
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 20A
Power - Max 50.4 W
Input Type Standard
Gate Charge 73 nC
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F-3
Base Product Number FGPF3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 992338-FGPF30N45TTU
Ultra Librarian 3D Model Ultra Librarian FGPF30N45TTU CAD Model

Description

Introducing the FGPF30N45TTU IGBT from ON Semiconductor

The FGPF30N45TTU is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor, a company renowned for its innovative and high-performance semiconductor solutions. This IGBT is designed to meet the demands of modern electronic applications, offering a perfect blend of high efficiency, reliability, and power density. It is particularly suited for applications requiring fast switching and robust performance, such as motor drives, power inverters, and power supplies.

Key Features of the FGPF30N45TTU:

  • Voltage & Current Ratings: The device boasts a collector-emitter voltage (Vce) of 450V and a continuous collector current (Ic) of 30A, making it suitable for handling high-power applications.
  • Low Saturation Voltage: With a low on-state collector-emitter saturation voltage (Vce(sat)), the FGPF30N45TTU ensures reduced conduction losses, enhancing overall system efficiency.
  • Fast Switching Speed: The fast switching capability minimizes switching losses and enables operation at higher frequencies, which can lead to smaller and more cost-effective system designs.
  • High Input Impedance: The high input impedance simplifies gate drive design and reduces the power required to control the IGBT, contributing to energy savings.
  • Co-Packaged Free Wheeling Diode: The inclusion of a co-packaged free wheeling diode provides protection against reverse voltage and reduces the need for external components, saving board space and cost.

Advantages of Using the FGPF30N45TTU:

The FGPF30N45TTU from ON Semiconductor provides numerous benefits for power electronic designs. Its high-efficiency operation reduces thermal stress and extends the lifespan of the device. The fast switching capabilities allow for higher performance in applications that require rapid response times. Moreover, the integrated free wheeling diode offers additional circuit protection and can help to simplify the design process by reducing the number of external components required.

ON Semiconductor's commitment to quality ensures that the FGPF30N45TTU IGBT is a reliable choice for engineers looking to optimize their power management systems. Whether you're designing for industrial, consumer, or automotive applications, the FGPF30N45TTU offers the performance and durability needed to create efficient, high-performing products.

For detailed specifications, application notes, and additional resources, visit ON Semiconductor's official website or contact their support team for technical assistance.

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