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Same model may have multiple batches, images only for reference.
AO8810#A Real Image
Same model may have multiple batches, images only for reference.

AO8810#A

Part No AO8810#A
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 7A 8-TSSOP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7A
Maximum Rds On at Id,Vgs 20 mOhm @ 7A, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1295pF @ 10V
Maximum Power Dissipation 1.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1010460-AO8810#A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AO8810#A CAD Model

Description

The Alpha & Omega Semiconductor Inc. AO8810#A is a dual N-Channel MOSFET designed for use in discrete semiconductor products.

  • Manufacturer: Alpha & Omega Semiconductor Inc.
  • Product Name: AO8810#A
  • Type: Dual N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 7A @ 25°C
  • Gate-Source Threshold Voltage: 1.1V @ 250μA
  • Maximum Gate Charge: 14nC @ 4.5V
  • Maximum Input Capacitance: 1295pF @ 10V
  • Maximum Rds On: 20 mOhm @ 7A, 4.5V
  • Package: 8-TSSOP
  • Mounting Type: SMD (SMT)
  • Lifecycle Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Common Applications: Requires a dual N-Channel MOSFET with a low gate-source threshold voltage and low Rds On

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8039 $60.2925
180+ $0.6595 $118.7100
275+ $0.6387 $175.6425
375+ $0.6179 $231.7125
485+ $0.5971 $289.5935
650+ $0.5359 $348.3350
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Availability: 4,000 pieces
MOQ: 75 pcs
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