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AOB25S65

Part No AOB25S65
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description 650V 25A a MOS Power Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Alpha & Omega Semiconductor Inc.
Win Source Part Number 1144873-AOB25S65
Manufacturer Homepage www.aosmd.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOB25S65 CAD Model

Description

The AOB25S65 from Alpha & Omega Semiconductor is a 650V αMOS5 Super Junction MOSFET designed for high-efficiency power conversion applications. This MOSFET leverages advanced super junction technology to minimize on-resistance (RDS(on)) and gate charge (Qg), leading to reduced conduction and switching losses. Its robust design and high-voltage capability make it suitable for demanding applications in power supplies, motor drives, and other industrial equipment.

Applications:

  • Power Factor Correction (PFC)
  • Server and Telecom Power Supplies
  • Lighting Ballasts
  • Renewable Energy Inverters (Solar, Wind)
  • Uninterruptible Power Supplies (UPS)

Features:

  • 650V Breakdown Voltage
  • Low RDS(on) - Reduces conduction losses and improves efficiency
  • Low Gate Charge (Qg) - Minimizes switching losses and enhances speed
  • Fast Body Diode - Improves efficiency in resonant topologies
  • Robust Avalanche Performance - Ensures reliability under transient conditions
  • αMOS5 Technology - Offers superior performance and efficiency

Benefits:

  • High Efficiency - Reduces power consumption and lowers operating costs
  • Improved Thermal Performance - Minimizes heat generation, simplifying thermal management
  • Enhanced Reliability - Robust design ensures stable and long-term operation
  • Simplified Design - Easy to drive and integrate into existing systems
  • Reduced System Size - High power density allows for smaller and more compact designs

Additional Details:

The AOB25S65 features a drain-source voltage (VDS) rating of 650V and a continuous drain current (ID) rating of 25A. The static drain-source on-resistance (RDS(on)) is typically 0.125 Ohms at VGS = 10V. The total gate charge (Qg) is typically 35 nC. It is available in a TO-263 package, providing excellent thermal performance and ease of mounting. The device's fast body diode is particularly beneficial in resonant power conversion topologies, reducing losses and improving efficiency.

This MOSFET's combination of high voltage rating, low RDS(on), and fast switching capabilities makes it an excellent choice for modern power conversion systems. Its robust avalanche performance ensures reliable operation even under transient conditions, while its αMOS5 technology delivers superior efficiency and performance. The AOB25S65 provides a high-performance and reliable solution for demanding power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.9418 $58.8360
48+ $2.4140 $115.8720
75+ $2.3389 $175.4175
103+ $2.2626 $233.0478
132+ $2.1876 $288.7632
177+ $1.9612 $347.1324
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,800 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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