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Same model may have multiple batches, images only for reference.
AOB4S60L Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOB4S60L

Part No AOB4S60L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A D2PAK
Datasheet
AOB4S60L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.1V @ 250μA
Max Gate Charge 6nC @ 10V
Max Input Capacitance 263pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1016889-AOB4S60L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOB4S60L CAD Model

Description

The Alpha & Omega Semiconductor Inc. AO4S60L is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 83W
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 600V
  • Maximum Rds On @ Id, Vgs: 900 mOhm @ 2A, 10V
  • Package: TO-263 (D2Pak)
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Applications: Power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
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Availability: 3,526 pieces
MOQ: 90 pcs
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