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AOI1N60L

Part No AOI1N60L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.3A TO251A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 8nC @ 10V
Max Input Capacitance 160pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 9 Ohm @ 650mA, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251A
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 078149-AOI1N60L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOI1N60L CAD Model

Description

AOI1N60L Product Description

The AOI1N60L is a high-performance N-channel MOSFET transistor designed for advanced electronics applications. With its robust construction and reliable performance, it is suitable for a variety of uses that demand efficiency and precision.

Applications

  • Power Management Systems
  • DC-DC Converters
  • LED Lighting Systems
  • Motor Drives
  • Power Supplies

Features and Benefits

  • High Voltage Tolerance (up to 600V)
  • Fast Switching Speed
  • Low On-Resistance for Reduced Power Loss
  • Enhanced Durability and Stability
  • Compact Package Design for Space-Saving Solutions

With its capability to handle high voltages, the AOI1N60L is ideal for applications requiring compact yet powerful electronic components.

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