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Same model may have multiple batches, images only for reference.
AOK40B65H1 Real Image
Same model may have multiple batches, images only for reference.

AOK40B65H1

Part No AOK40B65H1
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog IGBTs - Single
Description IGBT 650V 40A TO247
Datasheet
AOK40B65H1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 650V
Maximum Current Collector 80A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 40A
Maximum Power Dissipation 300W
Total Switching Energy(Ets) 1.27mJ (on), 460μJ (off)
Input Type Standard
Gate Charge 63nC
Turn-on and Turn-off delay time 41ns/130ns
Testing Conditions 400V, 40A, 7.5 Ohm, 15V
Reverse Recovery Time (trr) 346ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 1016975-AOK40B65H1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOK40B65H1 CAD Model

Description

The Alpha & Omega Semiconductor Inc. AOK40B65H1 is a through hole mounted IGBT transistor with a reverse recovery time of 346ns.

  • Mounting Type: Through Hole
  • Reverse Recovery Time: 346ns
  • Collector-Emitter Breakdown Voltage: 650V
  • Maximum Collector Current: 80A
  • Power Dissipation: 300W
  • Pulsed Collector Current: 120A
  • Switching Energy (on): 1.27mJ
  • Switching Energy (off): 460μJ
  • Turn-on Delay Time: 41ns
  • Turn-off Delay Time: 130ns
  • Gate Charge: 63nC
  • Collector-Emitter Saturation Voltage: 2.4V @ 15V, 40A
  • Suitable for: Discrete semiconductor products
  • Operating Temperature: -55°C to 175°C (TJ)

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