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AON2701L

Part No AON2701L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Sample
Rohs State rohs
ECAD Module
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Manufacturer Alpha & Omega Semiconductor Inc.
Win Source Part Number 1144969-AON2701L
Manufacturer Homepage www.aosmd.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AON2701L CAD Model

Description

The AON2701L from Alpha & Omega Semiconductor is a P-Channel enhancement mode MOSFET designed for load switching and power management applications. It utilizes advanced trench technology to provide low on-resistance (RDS(ON)), fast switching speeds, and low gate charge. These features make it suitable for portable devices, battery management systems, and DC-DC converters where efficiency and size are critical.

Applications:

  • Load Switching
  • Power Management in Portable Devices (Smartphones, Tablets)
  • Battery Management Systems
  • DC-DC Converters
  • Power Adapters

Features:

  • Low RDS(ON) - Minimizes conduction losses and improves efficiency
  • Low Gate Charge (Qg) - Enables faster switching speeds and reduces switching losses
  • Logic Level Gate Drive - Allows direct drive from logic circuits
  • Advanced Trench Technology - Provides superior performance
  • RoHS Compliant - Environmentally friendly

Benefits:

  • Increased Efficiency - Reduced power loss translates to cooler operation and extended battery life.
  • Faster Switching - Improved dynamic performance in high-frequency applications.
  • Simplified Design - Logic level gate drive reduces the need for complex gate drive circuitry.
  • Reliable Performance - Robust design ensures stable operation in demanding environments.
  • Environmentally Compliant - Meets environmental regulations for responsible product design.

Additional Details:

The AON2701L features a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) rating of -4.5A. The static drain-source on-resistance (RDS(ON)) is typically 45 mΩ at VGS = -10V and 70 mΩ at VGS = -4.5V. It is available in a DFN2x2 package, which is small and space-saving. This MOSFET is designed for applications requiring efficient power switching and low power consumption in a compact form factor.

The AON2701L's low RDS(ON) and fast switching capabilities make it ideal for portable devices where efficiency is paramount. Its logic-level gate drive simplifies the design process and reduces component count. The small DFN2x2 package allows for high-density designs. The AON2701L provides a reliable and efficient solution for power management needs in modern electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $35.6179 $71.2358
4+ $29.2250 $116.9000
7+ $28.3114 $198.1798
9+ $27.3989 $246.5901
11+ $26.4853 $291.3383
15+ $23.7456 $356.1840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,700 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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