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Same model may have multiple batches, images only for reference.
AON6502 Real Image
Same model may have multiple batches, images only for reference.

AON6502

Part No AON6502
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 49A DFN5X6
Datasheet
AON6502 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 49A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 3430pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 7.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-DFN (5x6)
Dimension 8-PowerSMD, Flat Leads
Win Source Part Number 1017065-AON6502
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AON6502 CAD Model

Description

The Alpha & Omega Semiconductor Inc. AON6502 is a N-Channel MOSFET that has a maximum power dissipation of 7.4W (Ta) and 83W (Tc).

  • Manufacturer: Alpha & Omega Semiconductor Inc.
  • Product Name: AON6502
  • Type: N-Channel MOSFET
  • Maximum Power Dissipation: 7.4W (Ta) and 83W (Tc)
  • Mounting: Reel - TR
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 49A (Ta) and 85A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 64nC @ 10V
  • Maximum Rds On: 2.2 mOhm @ 20A, 10V

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