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AON6912A

Part No AON6912A
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 10A/13.8A 8DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A, 13.8A
Maximum Rds On at Id,Vgs 13.7 mOhm @ 10A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 910pF @ 15V
Maximum Power Dissipation 1.9W, 2.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-DFN (5x6)
Win Source Part Number 180572-AON6912A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AON6912A CAD Model

Description

Overview

The AON6912A is an advanced MOSFET known for its superior efficiency and electrical characteristics, making it ideal for high-demand applications in various electronic domains.

Features and Benefits

  • Low gate charge for efficient operation.
  • Excellent thermal conductivity.
  • High tolerance to voltage fluctuations.

Applications

  • Power conversion systems.
  • Industrial automation equipment.
  • Renewable energy systems.

Additional Details

Engineered for high performance in challenging environments, the AON6912A offers robustness and reliability for today’s complex electronics setups.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6634 $59.7060
215+ $0.5445 $117.0675
330+ $0.5274 $174.0420
455+ $0.5104 $232.2320
590+ $0.4934 $291.1060
785+ $0.4424 $347.2840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,450 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipping Information

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