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Same model may have multiple batches, images only for reference.
AOSN21319C Real Image
Same model may have multiple batches, images only for reference.

AOSN21319C

Part No AOSN21319C
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
AOSN21319C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Alpha & Omega Semiconductor Inc.
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 320 pF @ 15 V
Power Dissipation (Max) 1.1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SC-70-3
Package / Case SC-70, SOT-323
Base Product Number AOSN21319
Other Names 785-AOSN21319CDKR,785-AOSN21319CTR,785-AOSN21319CCT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278411-AOSN21319C
Ultra Librarian 3D Model Ultra Librarian AOSN21319C CAD Model

Description

The AOSN21319C is a P-channel MOSFET transistor manufactured by Alpha & Omega Semiconductor Inc.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 2.6A
  • Power Dissipation: 1.1W

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2053 $50.2985
595+ $0.1685 $100.2575
920+ $0.1632 $150.1440
1,270+ $0.1579 $200.5330
1,640+ $0.1527 $250.4280
2,195+ $0.1369 $300.4955
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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