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Same model may have multiple batches, images only for reference.
AOSS21319C Real Image
Same model may have multiple batches, images only for reference.

AOSS21319C

Part No AOSS21319C
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
AOSS21319C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Alpha & Omega Semiconductor Inc.
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 320 pF @ 15 V
Power Dissipation (Max) 1.3W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-3
Package / Case 3-SMD, SOT-23-3 Variant
Base Product Number AOSS21319
Other Names 785-AOSS21319CCT,785-AOSS21319CTR,785-AOSS21319CDKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278412-AOSS21319C
Ultra Librarian 3D Model Ultra Librarian AOSS21319C CAD Model

Description

The AOSS21319C is a P-channel MOSFET transistor manufactured by Alpha & Omega Semiconductor Inc.

  • Case/Package: 3-SMD, SOT-23-3 Variant
  • Gate Voltage: ±20V
  • Drain to Source Voltage: 30 V
  • Vgs(th): 2.2V @ 250µA
  • Power Dissipation: 1.3W
  • Operating Temperature Range: -55°C to 150°C
  • Packaging: Tape and Reel
  • Gate Charge: 12 nC @ 10 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2441 $50.0405
440+ $0.2287 $100.6280
680+ $0.2210 $150.2800
975+ $0.2055 $200.3625
1,265+ $0.1978 $250.2170
1,580+ $0.1901 $300.3580
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Availability: 12,600 pieces
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