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Same model may have multiple batches, images only for reference.
AOT10N65 Real Image
Same model may have multiple batches, images only for reference.

AOT10N65

Part No AOT10N65
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 10A TO220
Datasheet
AOT10N65 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1645pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 199104-AOT10N65
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AOT10N65 CAD Model

Description

Applications

  • Inverters
  • Electric Vehicle Chargers
  • Power Tools

Features and Benefits

  • Superior Thermal Management
  • High Current Capacity
  • Optimized for Fast Switching

Details

The AOT10N65 combines high current capacity with superior thermal management, making it ideal for energy-efficient applications. Its fast switching speed enhances performance in applications such as inverters and electric vehicle chargers, providing reliability and long-term durability.

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