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AOT11C60L

Part No AOT11C60L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 2000pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 278W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017167-AOT11C60L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOT11C60L CAD Model

Description

The AOT11C60L is an N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.

  • Packaging: Tube/rail
  • Mounting: Through-hole technology
  • Maximum Power Dissipation: 278W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 11A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 42nC @ 10V
  • Maximum Rds On @ Id, Vgs: 400 mOhm @ 5.5A, 10V
  • Popularity: Popular
  • Supply and Demand: Sufficient
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5232 $60.1680
270+ $0.4285 $115.6950
420+ $0.4158 $174.6360
575+ $0.4019 $231.0925
745+ $0.3892 $289.9540
995+ $0.3488 $347.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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