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Same model may have multiple batches, images only for reference.
AOT11N70 Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOT11N70

Part No AOT11N70
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 11A TO220
Datasheet
AOT11N70 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 700V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 271W (Tc)
Maximum Rds On at Id,Vgs 870 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017169-AOT11N70
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOT11N70 CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a high-performance N-Channel polarity component that can handle a maximum power dissipation of 271W (Tc) and continuous drain current of 11A (Tc) @ 25°C.

  • Drain-Source Breakdown Voltage: 700V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Package: TO-220 package
  • Maximum Rds On @ Id,Vgs: 870 mOhm @ 5.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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