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NSS1C200MZ4T1G

Part No NSS1C200MZ4T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 2A SOT223 / 100 V, 2.0 A, Low VCE(sat) PNP Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer ON Semiconductor
Packaging Reel
Transistor Type PNP
Current - Collector (Ic) (Maximum) 2A
Voltage - Collector Emitter Breakdown (Maximum) 100V
Vce Saturation (Maximum) at Ib, Ic 220mV at 200mA, 2A
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Min) at Ic, Vce 120 at 500mA, 2V
Power - Max 800mW
Frequency - Transition 120MHz
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-261-4, TO-261AA
Supplier Device Package SOT-223
Part Number Series NSS1C200
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 808501-NSS1C200MZ4T1G
Ultra Librarian 3D Model Ultra Librarian NSS1C200MZ4T1G CAD Model

Description

The NSS1C200MZ4T1G is a high-performance, energy-efficient N-channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in semiconductor solutions. This MOSFET is specifically engineered to address the needs of modern compact electronic applications, providing a combination of low on-resistance and high switching speed.

Key Features

  • Low On-Resistance: The NSS1C200MZ4T1G boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Switching Speed: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal switching losses and better performance in power conversion systems.
  • Low Threshold Voltage: The device features a low threshold voltage, making it suitable for low voltage applications and ensuring reliable operation even at lower gate drive voltages.
  • Surface Mount Package: The MOSFET comes in a compact SOT-223 surface-mount package, which allows for efficient use of PCB space and is suitable for automated assembly processes.
  • RoHS Compliant: In line with environmental standards, the NSS1C200MZ4T1G is RoHS compliant, meaning it is free from hazardous substances commonly found in electronic components.

Applications

The versatility of the NSS1C200MZ4T1G makes it an excellent choice for a wide range of applications, including:

  • Power management in portable devices
  • DC/DC converters
  • Load switches
  • Battery management systems
  • Motors and relay drivers

Technical Specifications

Some of the key technical specifications of the NSS1C200MZ4T1G include a continuous drain current of up to 2.2 A, a drain-source voltage (Vds) of 20 V, and a maximum power dissipation of 1.25 W. The operating temperature range of the device spans from -55°C to 150°C, ensuring reliability across various environmental conditions.

Conclusion

The NSS1C200MZ4T1G by ON Semiconductor is a testament to the company's commitment to providing innovative, high-quality components for the electronics industry. Its compact size, energy efficiency, and robustness make it an ideal choice for designers looking to enhance the performance and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7277 $50.9390
170+ $0.5971 $101.5070
260+ $0.5784 $150.3840
360+ $0.5598 $201.5280
465+ $0.5411 $251.6115
620+ $0.4851 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,030 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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