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DMC3028LSDXQ-13

Part No DMC3028LSDXQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.5A, 5.8A
Maximum Rds On at Id,Vgs 27 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 13.2nC @ 5V
Max Input Capacitance 641pF @ 15V
Maximum Power Dissipation 1.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1033649-DMC3028LSDXQ-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMC3028LSDXQ-13 CAD Model

Description

DMC3028LSDXQ-13 MOSFET by Diodes Incorporated

The DMC3028LSDXQ-13 is a high-performance, dual N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, tailored to meet the requirements of modern electronic circuits.

Constructed with advanced trench technology, the DMC3028LSDXQ-13 MOSFET offers excellent R<sub>DS(on) and low gate charge, making it an efficient choice for power management tasks. This product is designed to handle high-density power applications, providing a compact and energy-efficient solution for designers.

The DMC3028LSDXQ-13 comes in a space-saving PowerDI®5060-8 package, which is characterized by its low thermal resistance. This packaging ensures that the device can operate at lower temperatures, enhancing its reliability and longevity in various applications, such as power supplies, DC-DC converters, and motor drives.

Key Features of the DMC3028LSDXQ-13 MOSFET:

  • Low On-Resistance: The MOSFET features a low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High-Speed Switching: The device is optimized for fast switching speeds, which is essential for minimizing switching losses and improving performance in high-frequency circuits.
  • Dual N-Channel Configuration: The dual N-Channel setup allows for flexibility in design, enabling the implementation of half-bridge or full-bridge topologies.
  • RoHS Compliant: The product complies with RoHS standards, ensuring that it is free from hazardous substances and suitable for use in environmentally sensitive applications.

With its robust design and advanced features, the DMC3028LSDXQ-13 is a versatile component that can meet the demands of a wide range of electronic designs. Its high efficiency and reliability make it an ideal choice for designers looking to optimize their power management systems.

For detailed specifications, application notes, and additional information, designers and engineers are encouraged to consult the datasheet available on the Diodes Incorporated website or contact their sales representatives.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6639 $53.1120
185+ $0.5448 $100.7880
285+ $0.5277 $150.3945
395+ $0.5107 $201.7265
510+ $0.4937 $251.7870
680+ $0.4426 $300.9680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,407 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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