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Same model may have multiple batches, images only for reference.
AOT7N60 Real Image
Same model may have multiple batches, images only for reference.

AOT7N60

Part No AOT7N60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A TO-220
Datasheet
AOT7N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 1035pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 192W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017230-AOT7N60
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOT7N60 CAD Model

Description

The Alpha & Omega Semiconductor Inc. AOT7N60 is a high-performance N-channel MOSFET that is designed for discrete semiconductor applications.

  • Maximum Power Dissipation: 192W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Package: TO-220
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4335 $52.0200
285+ $0.3557 $101.3745
440+ $0.3446 $151.6240
600+ $0.3335 $200.1000
780+ $0.3224 $251.4720
1,040+ $0.2890 $300.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 49 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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