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AOT7S65L

Part No AOT7S65L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 9.2nC @ 10V
Max Input Capacitance 434pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 650 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017233-AOT7S65L
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian AOT7S65L CAD Model

Description

The 424007 from Alpha & Omega Semiconductor Inc. is a MOSFET electronic component used in discrete semiconductor products.

  • Popularity: medium
  • Supply and Demand Status: balanced
  • Packaging: tube/rail
  • Mounting: through hole
  • Polarity: N-channel
  • Power Dissipation (max): 104W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Dimensions: TO-220-3
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 7A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 650 mOhm @ 3.5A, 10V
  • Maximum Gate Charge: 9.2nC @ 10V
  • Maximum Input Capacitance: 434pF @ 100V
  • Package Quantity: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5197 $60.7880
95+ $1.2469 $118.4555
145+ $1.2081 $175.1745
200+ $1.1690 $233.8000
260+ $1.1301 $293.8260
345+ $1.0132 $349.5540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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