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Same model may have multiple batches, images only for reference.
AOTF2918L Real Image
Same model may have multiple batches, images only for reference.

AOTF2918L

Part No AOTF2918L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 58A TO220F
Datasheet
AOTF2918L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 13A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 3430pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 41W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Win Source Part Number 1017269-AOTF2918L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOTF2918L CAD Model

Description

The AOTF2918L is an N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It is a high-performance MOSFET that is designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 13A @ 25°C
  • Maximum Rds On: 7 mOhm @ 20A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-220-3F
  • Mounting: Through Hole
  • Supply and Demand Status: Sufficient

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