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AOTF3N100

Part No AOTF3N100
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 2.8A TO220F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 830pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 6 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Win Source Part Number 1017272-AOTF3N100
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOTF3N100 CAD Model

Description

The MOSFET is a high-power N-Channel transistor manufactured by Alpha & Omega Semiconductor Inc. with a drain-source breakdown voltage of 1000V and a continuous drain current of 2.8A @ 25°C.

  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 2.8A @ 25°C
  • Power Dissipation: 38W (Tc)
  • Maximum Rds On: 6 Ohm @ 1.5A, 10V
  • Mounting Type: Through Hole
  • Package: TO-220-3F
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Input Capacitance: 830pF @ 25V
  • Max Gate Charge: 20nC @ 10V
  • Suitable For: Discrete semiconductor products and power electronics
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.1883 $50.3309
56+ $1.7956 $100.5536
87+ $1.7395 $151.3365
119+ $1.6833 $200.3127
154+ $1.6273 $250.6042
206+ $1.4589 $300.5334
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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