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Same model may have multiple batches, images only for reference.
AOU7S60 Real Image
Same model may have multiple batches, images only for reference.

AOU7S60

Part No AOU7S60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A TO251
Datasheet
AOU7S60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 8.2nC @ 10V
Max Input Capacitance 372pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1017296-AOU7S60
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOU7S60 CAD Model

Description

The Alpha & Omega Semiconductor Inc. AOU7S60 is a N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Package: TO-251-3
  • Drain-Source Breakdown Voltage: 600V
  • Power Dissipation: 83W (Tc)
  • Continuous Drain Current: 7A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.9V @ 250μA
  • Maximum Gate Charge: 8.2nC @ 10V
  • Maximum Input Capacitance: 372pF @ 100V
  • Maximum Rds On @ Id,Vgs: 600 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting Type: Through-Hole
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1411 $62.7605
125+ $0.9362 $117.0250
195+ $0.9071 $176.8845
265+ $0.8778 $232.6170
345+ $0.8485 $292.7325
460+ $0.7607 $349.9220
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Availability: 20,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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