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AOWF2606

Part No AOWF2606
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 13A TO262F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 13A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 4050pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 33.3W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262F
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1017332-AOWF2606
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOWF2606 CAD Model

Description

The AOWF2606 is an Alpha & Omega Semiconductor (AOS) MOSFET designed for radio frequency (RF) applications. This device leverages advanced trench MOSFET technology to deliver high efficiency and low distortion in RF power amplifiers and switches. Its characteristics make it suitable for use in various wireless communication systems and RF power applications.

Applications:

  • RF power amplifiers in cellular base stations.
  • RF switches in antenna tuning units.
  • Driver amplifiers in wireless communication systems.
  • Radar systems for signal amplification and control.
  • Test and measurement equipment requiring RF power amplification.

Features:

  • High power gain, enabling efficient amplification of RF signals.
  • Low on-resistance (RDS(on)), minimizing power losses and improving efficiency.
  • Fast switching speed, allowing for efficient operation at high frequencies.
  • Low gate capacitance, reducing input impedance and simplifying impedance matching.
  • Thermally enhanced package, providing efficient heat dissipation.

Benefits:

  • Increased power efficiency in RF power amplifiers, reducing power consumption and heat generation.
  • Improved signal quality, due to the low distortion and high linearity.
  • Reduced system size and cost, by minimizing the need for external components.
  • Enhanced system reliability, because of the robust design and efficient thermal management.
  • Optimized performance in high-frequency applications, because of the fast switching speed and low gate capacitance.

Additional Details:

The AOWF2606 is commonly packaged in a surface-mount package designed for efficient heat dissipation. Key specifications include a drain-source voltage (VDS) rating, a continuous drain current (ID) rating, and a power dissipation (PD) rating. The gate-source voltage (VGS) rating and operating frequency range are also important parameters to consider. Proper impedance matching and thermal management are crucial for achieving optimal performance in RF applications. It is recommended to consult the datasheet for detailed specifications and application notes to ensure proper implementation.

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