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Same model may have multiple batches, images only for reference.
AOWF7S65 Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOWF7S65

Part No AOWF7S65
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7A TO262F
Datasheet
AOWF7S65 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 9.2nC @ 10V
Max Input Capacitance 434pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 650 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1017336-AOWF7S65
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AOWF7S65 CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a high-quality electronic component that is designed for use in discrete semiconductor products.

  • Power Dissipation: 25W (Tc)
  • Drain-Source Breakdown Voltage: 650V
  • Channel Type: N-Channel
  • Polarity: N-Channel
  • Drive Voltage: 10V
  • Maximum Rds On: 650 mOhm @ 3.5A, 10V
  • Mounting Type: Through Hole
  • Packaging: Tube/Rail
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-262-3 with long leads, I2Pak, and TO-262AA dimensions
  • Popularity: Medium
  • Supply and Demand: Limited

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