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T8N60

Part No T8N60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 12+
Reference case TO-220
Manufacturer Alpha & Omega Semiconductor Inc.
Manufacturer Homepage www.aosmd.com
Win Source Part Number 749736-T8N60
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian T8N60 CAD Model

Description

The T8N60 is an N-Channel enhancement mode MOSFET from Alpha & Omega Semiconductor. This MOSFET is designed to provide high voltage, fast switching, and ruggedness, making it suitable for various power electronics applications. It offers a good balance between on-resistance and gate charge, contributing to efficient and reliable performance.

Applications:

  • Power Factor Correction (PFC): Widely used in PFC circuits to improve power quality and energy efficiency.
  • Switch-Mode Power Supplies (SMPS): Employed in SMPS for efficient voltage conversion and regulation.
  • Lighting Ballasts: Suitable for use in electronic ballasts for lighting applications.
  • Motor Control: Used in motor control circuits for efficient and precise motor operation.
  • Inverters: Employed in inverters to convert DC power to AC power.

Features:

  • High Voltage (600V): Suitable for high-voltage applications.
  • Low On-Resistance (RDS(ON)): Minimizes power loss and improves efficiency.
  • Fast Switching Speed: Enables efficient switching behavior.
  • Low Gate Charge (Qg): Reduces switching losses and improves efficiency.
  • Avalanche Rated: Ensures ruggedness and reliability under transient conditions.

Benefits:

  • Increased Energy Efficiency: Low RDS(ON) minimizes power dissipation, leading to higher energy efficiency.
  • High Voltage Capability: Suitable for applications with high voltage requirements.
  • Improved Thermal Performance: Reduces heat generation, contributing to improved thermal management.
  • Enhanced Reliability: Avalanche rating ensures the device can withstand transient voltage spikes.
  • Simplified Circuit Design: Reduces component count.

The T8N60 is typically available in a through-hole or surface-mount package, facilitating different assembly requirements. The device is RoHS compliant, ensuring it meets environmental regulations. It is particularly well-suited for applications where high voltage operation and power efficiency are critical design considerations.

Typical Electrical Characteristics: Gate-Source Voltage (VGS) +/- 30V, Drain-Source Voltage (VDS) 600V, Continuous Drain Current (ID) 8A, Pulsed Drain Current (IDM) 24A, Total Power Dissipation (PD) 48W.

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