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Same model may have multiple batches, images only for reference.
BLF6G10LS-200RN NXP
Same model may have multiple batches, images only for reference.

BLF6G10LS-200RN

Part No BLF6G10LS-200RN
Manufacturer Ampleon USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description RF FET LDMOS 65V SOT539
Datasheet
BLF6G10LS-200RN Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr Ampleon USA Inc.
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 700MHz ~ 1GHz
Gain 20dB
Voltage - Test 28 V
Current Rating (Amps) 4.2µA
Current - Test 1.4 A
Power - Output 200W
Voltage - Rated 65 V
Mounting Type Chassis Mount
Package / Case SOT-502B
Supplier Device Package SOT502B
Standard Package 100 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
Win Source Part Number 571031-BLF6G10LS-200RN
Ultra Librarian 3D Model Ultra Librarian BLF6G10LS-200RN CAD Model

Description

The 571031-BLF6G10LS-200RN is a high-power RF MOSFET designed for use in wireless communication systems. It features a voltage rating of 65V and a frequency range of 700MHz to 1GHz, making it suitable for a wide range of RF systems. The MOSFET has a gain of 20dB and an output power of 200W, providing excellent performance in RF power amplification.

  • Mounting: Chassis
  • Package: Tape and reel
  • Description: A reliable and high-performance solution for wireless communication systems.

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1+ $115.0876 $115.0876
2+ $111.3750 $222.7500
3+ $107.6626 $322.9878
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