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BLF6G27-135,112

Part No BLF6G27-135,112
Manufacturer Ampleon USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description RF FET LDMOS 65V SOT502A / Trans RF MOSFET N-CH 65V 34A 3-Pin SOT-502A Blister
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Ampleon USA Inc.
Packaging Tray
Part Status Obsolete(EOL)
Transistor Type LDMOS
Voltage - Test 32V
Current Rating 34A
Current - Test 1.2A
Power - Output 20W
Voltage Rating DC 65V
Package SOT-502A
Manufacturer Package LDMOST
Win Source Part Number 770139-BLF6G27-135,112
Popularity Medium
Supply and Demand Status Limited
Family Name BLF6G27-135
Introduction Date December 07, 2015
ECCN EAR99
Ultra Librarian 3D Model Ultra Librarian BLF6G27-135,112 CAD Model

Description

The BLF6G27-135,112 is a 135 W LDMOS power transistor from Ampleon, designed for high-performance applications in the 2700 MHz (2.7 GHz) frequency range. This transistor is commonly used in industrial, scientific, and medical (ISM) applications, as well as in radio frequency (RF) energy systems.

Applications:

  • Industrial Heating: Used in RF solid-state generators for industrial heating processes.
  • Plasma Generation: Employed in RF plasma generators for various industrial and scientific applications.
  • RF Lighting: Applied in RF lighting systems for efficient and controlled light generation.
  • Medical Applications: Used in medical RF energy systems for therapeutic and diagnostic purposes.
  • RF Cooking: Potential use in RF cooking appliances for rapid and efficient heating.
  • Scientific Research: Utilized in various scientific research applications requiring high-frequency RF power.

Features:

  • High Output Power: Delivers 135 W of output power at 2.7 GHz.
  • LDMOS Technology: Utilizes LDMOS technology for high efficiency and reliability.
  • High Gain: Offers high gain, reducing the required drive power.
  • Ruggedness: Designed for robust performance in demanding environments.
  • Integrated ESD Protection: Provides protection against electrostatic discharge.
  • RoHS Compliant: Meets RoHS (Restriction of Hazardous Substances) standards.

Benefits:

  • High Efficiency: LDMOS technology provides high efficiency, minimizing power consumption and heat dissipation.
  • Reliable Operation: Robust design ensures reliable operation in harsh industrial environments.
  • Simplified System Design: High gain simplifies the design of RF power amplifiers.
  • Compact Size: Small footprint allows for integration into compact systems.
  • Reduced System Cost: High efficiency and reduced drive power requirements contribute to lower system costs.
  • Stable Performance: Designed for stable operation, minimizing the risk of oscillations and other performance issues.

Technical Specifications:

  • Frequency Range: 2700 MHz (2.7 GHz)
  • Output Power: 135 W
  • Technology: LDMOS
  • Application: ISM, RF Energy

The BLF6G27-135,112 is a versatile and efficient RF power transistor suitable for a wide range of industrial, scientific, and medical applications. Its high power capability, high gain, and robust design make it an excellent choice for demanding RF energy systems.

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