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Same model may have multiple batches, images only for reference.
MZ0912B50Y NXP
Same model may have multiple batches, images only for reference.

MZ0912B50Y

Part No MZ0912B50Y
Manufacturer Ampleon USA Inc.
Catalog RF Transistors (BJT)
Description RF POWER BIPOLAR TRANSISTOR, 1-E
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Ampleon USA Inc.
Package Bulk
Product Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 20V
Frequency - Transition 1.215GHz
Gain 8dB
Power - Max 150W
Current - Collector (Ic) (Max) 3A
Temperature Range - Operating 200°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-443A
Supplier Device Package SOT443A
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 646443-MZ0912B50Y
Ultra Librarian 3D Model Ultra Librarian MZ0912B50Y CAD Model

Description

The 646443-MZ0912B50Y is an NPN bipolar RF transistor designed for use in discrete semiconductor products.

  • Maximum Power: 150W
  • Maximum Voltage: 20V
  • Maximum Collector Current: 3A
  • Gain: 8dB
  • Package: SOT-443A
  • Mounting: Chassis
  • Product Status: Active
  • Manufacturer: Ampleon USA Inc.

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