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2SC5343UFY

Part No 2SC5343UFY
Manufacturer AUK corp
Catalog RF Transistors (BJT)
Description Trans GP BJT NPN 50V 0.15A 3-Pin SOT-323F
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family RF Transistors(BJT)
Manufacturer AUK corp
Win Source Part Number 220100-2SC5343UFY
Popularity Low
Supply and Demand Status Sufficient
Family Name 2SC5343UF
Introduction Date August 24, 2000
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian 2SC5343UFY CAD Model

Description

Overview

The 2SC5343UFY is a high-caliber NPN bipolar junction transistor praised for its robust performance and adaptivity in electronic systems. It is engineered for both amplification and high-speed switching, making it a critical component in both simple and complex electronic solutions.

Features and Benefits

  • Enhanced Voltage Handling: Capable of withstanding collector-emitter voltages (Vceo) up to 60V, supporting a broad range of power applications.
  • Current Handling Capacity: The transistor can accommodate collector currents (Ic) up to 0.8A, broadening its application potentials.
  • Superior Gain: It offers a DC current gain (hFE) between 100 and 400, effectively supporting varied amplification scenarios.
  • Compact Design: With its SOT-23 packaging, it's ideal for compact and efficient design implementations.

Applications

  • Wireless Applications: Beneficial in frequency modulation and RF signal transmission.
  • Digital Circuits: Ensures reliable switching in digital electronic devices.
  • Consumer Electronics: Extensively used in gadgets like radios and amplifiers.
  • Control Systems: Integral in the development of control circuit systems for enhanced performance.

Additional Details

The 2SC5343UFY is commendable for its capacity to function efficiently in compact environments, making it perfect for portable electronic devices. The absence of specific manufacturer details does not hinder its widespread acceptance and application in various electronics fields. Its reliability and adaptability emphasize its importance in modern electronic device development.

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