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NST3906DP6T5G

Part No NST3906DP6T5G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 40V 0.2A SOT-963
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 350mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-963
Win Source Part Number 025732-NST3906DP6T5G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NST3906DP6T5G CAD Model

Description

Product Overview: NST3906DP6T5G

The NST3906DP6T5G is a high-performance, dual PNP transistor developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This product is designed to offer a compact, efficient, and reliable solution for a variety of electronic applications, making it a versatile component for designers and engineers.

Key Features

  • Transistor Type: The device features two PNP transistors in a single package, which allows for space-saving in circuit design without compromising on performance.
  • Current Rating: Each transistor can handle a continuous collector current of up to 200 mA, which is suitable for moderate power applications.
  • Voltage Ratings: The collector-emitter voltage (V<sub>CEO) is rated at -40V, and the collector-base voltage (V<sub>CBO) is rated at -40V, providing a wide range of operation for various circuit requirements.
  • Power Dissipation: With a total device power dissipation of 250 mW, the NST3906DP6T5G can handle a fair amount of power for its size, making it ideal for power management applications.
  • Package: The component comes in a SOT-963 package, which is known for its small footprint and is suitable for high-density board designs.
  • Operating Temperature: It can operate within a temperature range of -55°C to +150°C, ensuring reliability and stability across various environmental conditions.

Applications

The NST3906DP6T5G is designed for general-purpose amplifier and switching applications. Its dual PNP configuration makes it particularly useful in push-pull amplifiers, signal processing, and power management circuits. Additionally, it can be utilized in consumer electronics, industrial control systems, and automotive modules where space is at a premium and efficiency is crucial.

Quality and Reliability

ON Semiconductor is committed to providing high-quality products that meet stringent industry standards. The NST3906DP6T5G is manufactured to ensure high reliability and performance under various conditions. It is also supported by ON Semiconductor's technical expertise and customer service, providing designers with confidence in their choice of components for critical applications.

Overall, the NST3906DP6T5G from ON Semiconductor is an excellent choice for designers looking for a dual PNP transistor that offers a balance of power, efficiency, and space-saving features.

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Pricing & Ordering

Quantity Unit Price Ext. Price
570+ $0.1020 $58.1400
1,380+ $0.0838 $115.6440
2,140+ $0.0811 $173.5540
2,945+ $0.0785 $231.1825
3,810+ $0.0759 $289.1790
5,095+ $0.0681 $346.9695
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 384,214 pieces
MOQ: 570 pcs
Order Increment : 1 pcs
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