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Same model may have multiple batches, images only for reference.
BD245B-S Real Image
Same model may have multiple batches, images only for reference.

BD245B-S

Part No BD245B-S
Manufacturer Bourns Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 10A SOT93 / Bipolar (BJT) Transistor NPN 80 V 10 A 3 W Through Hole SOT-93
Datasheet
BD245B-S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Bourns Inc.
Package Tube
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 4V @ 2.5A, 10A
Current - Collector Cutoff (Max) 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3A, 4V
Power - Max 3 W
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-218-3
Supplier Device Package SOT-93
Base Product Number BD245
Standard Package 300 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 863934-BD245B-S
Ultra Librarian 3D Model Ultra Librarian BD245B-S CAD Model

Description

The BD245B-S is an NPN bipolar transistor designed for general-purpose switching and amplification applications from Bourns Inc..

  • Maximum Power Dissipation: 3W
  • Collector-Emitter Breakdown Voltage: 80V
  • Maximum Collector Current (Ic): 10A
  • Collector-Emitter Saturation Voltage (Vce Saturation): 4V @ Ib=2.5A and Ic=10A
  • DC Current Gain (hFE): 20 @ 3A and 4V
  • Mounting Type: Through-hole
  • Package: TO-218-3
  • Operating Temperature: -65°C to 150°C
  • REACH: Compliant

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