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Same model may have multiple batches, images only for reference.
AT-41435G Real Image
Same model may have multiple batches, images only for reference.

AT-41435G

Part No AT-41435G
Manufacturer Broadcom Limited
Catalog RF Transistors (BJT)
Description RF TRANS NPN 12V 8GHZ 35 MICRO X
Datasheet
AT-41435G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Broadcom Limited
Package Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 1.3dB ~ 3dB @ 1GHz ~ 4GHz
Gain 10dB ~ 18.5dB
Power - Max 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 8V
Current - Collector (Ic) (Max) 60mA
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 4-SMD (35 micro-X)
Supplier Device Package 35 micro-X
Standard Package 100 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0040
Win Source Part Number 565739-AT-41435G
Ultra Librarian 3D Model Ultra Librarian AT-41435G CAD Model

Description

The 565739-AT-41435G is a bipolar RF transistor designed for use in discrete semiconductor products.

  • Product Name: 565739-AT-41435G
  • Type: Bipolar RF Transistor
  • Device Type: NPN
  • Maximum Power: 500mW
  • Collector-Emitter Breakdown Voltage: 12V
  • Maximum Collector Current: 60mA
  • Gain Range: 10dB to 18.5dB
  • Frequency Transition: 8GHz
  • Noise Figure: 1.3dB to 3dB @ frequencies ranging from 1GHz to 4GHz
  • Package: Surface Mount
  • Packaging: Bulk
  • Status: Obsolete
  • Manufacturer: Broadcom Limited

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