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CAT24WC03J-1.8TE13

Part No CAT24WC03J-1.8TE13
Manufacturer Catalyst Semiconductor
Catalog OEM Parts (C - E)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

RoHS Non-Compliant
Win Source Part Number 1051100-CAT24WC03J-1.8TE13
Categories OEM Parts(C-E)
Manufacturer Catalyst Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian CAT24WC03J-1.8TE13 CAD Model

Description

The CAT24WC03J-1.8TE13 is a 3Kb (384 bytes) Serial CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory) manufactured by Catalyst Semiconductor. It is organized as 384 x 8 bits and communicates via the I2C (Inter-Integrated Circuit) serial interface. This EEPROM is designed for low-voltage, low-power applications and provides reliable non-volatile data storage.

Applications:

  • Storing configuration data in embedded systems
  • Storing calibration data
  • Storing user preferences
  • Storing serial numbers and identification codes
  • Data logging

Features:

  • 3Kb (384 bytes) of EEPROM memory
  • I2C serial interface
  • Low-voltage operation (1.8V)
  • Low-power consumption
  • Write protect feature

Benefits:

  • Provides non-volatile storage for important data, retaining information even when power is off.
  • Simplifies communication with microcontrollers using the widely supported I2C interface.
  • Suitable for battery-powered and energy-efficient applications.
  • Minimizes power consumption, extending battery life.
  • Prevents accidental overwriting of data.

Additional Details:

The CAT24WC03J-1.8TE13 operates at a voltage of 1.8V. It supports standard and fast I2C modes. The device features a page write mode, allowing for faster writing of multiple bytes of data. The write protect feature can be enabled to prevent accidental modification of the stored data. The TE13 suffix typically indicates tape and reel packaging for automated assembly. It is designed to withstand multiple erase/write cycles. The device's datasheet provides detailed information on its electrical characteristics, timing specifications, and operating conditions. It is often used in applications requiring a small amount of non-volatile memory with low power consumption.

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