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Same model may have multiple batches, images only for reference.
NE662M04-T2-A Real Image
Same model may have multiple batches, images only for reference.

NE662M04-T2-A

Part No NE662M04-T2-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description RF TRANSISTOR NPN SOT-343F
Datasheet
NE662M04-T2-A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 3.3V
Frequency - Transition 25GHz
Noise Figure (dB Typ @ f) 1.1dB @ 2GHz
Gain 18dB
Maximum Power Dissipation 115mW
Typical Gain (hFE) (Min) 50 @ 5mA, 2V
Maximum Current Collector 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-343F
Win Source Part Number 1082909-NE662M04-T2-A
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NE662M04-T2-A CAD Model

Description

This component has a Win Source Part Number of 1082909-NE662M04-T2-A and is manufactured by CEL.

  • Manufacturer: CEL
  • Win Source Part Number: 1082909-NE662M04-T2-A
  • Gain: 18dB
  • Frequency Transition: 25GHz
  • Transistor Polarity: NPN
  • Noise Figure: 1.1dB @ 2GHz
  • Operating Temperature: 150°C (TJ)
  • Case / Package: SOT-343F
  • Maximum Current Collector: 35mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 3.3V
  • Typical Gain (hFE) (Min): 50 @ 5mA, 2V
  • Maximum Power Dissipation: 115mW

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