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NSCT3906LT1G

Part No NSCT3906LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.2A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 225mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 060564-NSCT3906LT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NSCT3906LT1G CAD Model

Description

ON Semiconductor NSCT3906LT1G Product Overview

The NSCT3906LT1G is a high-performance, dual NPN and PNP transistor from ON Semiconductor, designed to cater to a wide array of applications requiring small-signal amplification and switching. This product is a testament to ON Semiconductor's commitment to providing energy-efficient and innovative solutions for electronic components.

Key Features

  • Transistor Type: The NSCT3906LT1G integrates both NPN and PNP transistors in a single package, offering versatility in circuit design.
  • Package: Enclosed in a compact SOT-23 surface-mount package, this device is ideal for space-constrained applications.
  • Current Rating: It boasts a collector current rating of 200 mA, which is sufficient for a wide range of low-power applications.
  • Voltage Ratings: The device has a collector-emitter voltage rating of 40 V for the NPN transistor and 50 V for the PNP transistor, ensuring reliable operation under various conditions.
  • Power Dissipation: With a power dissipation of 225 mW, it can handle moderate levels of power for its size.
  • High Gain Bandwidth Product: The product features a high gain bandwidth product (fT) of 100 MHz, making it suitable for high-frequency applications.
  • Moisture Sensitivity Level: The NSCT3906LT1G has a moisture sensitivity level (MSL) of 1, indicating it can be exposed to ambient room conditions for unlimited periods before mounting.

Applications

The dual configuration and electrical characteristics of the NSCT3906LT1G make it an excellent choice for a variety of applications, including:

  • Signal amplification in audio and video equipment
  • Driver stages in low-power inverters
  • Switching operations in consumer electronics
  • Linear amplification and switching in embedded systems
  • Power management circuits in portable devices

Quality and Reliability

ON Semiconductor ensures that the NSCT3906LT1G meets rigorous quality standards. The device is manufactured with state-of-the-art technology, providing dependable performance and longevity. The SOT-23 package is RoHS compliant, ensuring that it meets current environmental standards by avoiding the use of hazardous substances.

In summary, the NSCT3906LT1G from ON Semiconductor is an efficient and reliable choice for designers looking to incorporate a dual NPN and PNP transistor configuration within their electronic designs, providing flexibility, efficiency, and high performance in a compact footprint.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4,170+ $0.0139 $57.9630
10,000+ $0.0116 $116.0000
15,000+ $0.0116 $174.0000
22,225+ $0.0104 $231.1400
27,780+ $0.0104 $288.9120
37,500+ $0.0092 $345.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,530 pieces
MOQ: 4170 pcs
Order Increment : 1 pcs
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