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Same model may have multiple batches, images only for reference.
IRF6633TRPBF
Same model may have multiple batches, images only for reference.

IRF6633TRPBF

Part No IRF6633TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 16A DIRECTFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 16A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1250pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.3W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 5.6 mOhm @ 16A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MP
Dimension DirectFET Isometric MP
Win Source Part Number 125323-IRF6633TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6633TRPBF CAD Model

Description

The IRF6633TRPBF is an N-Channel MOSFET from Infineon Technologies.

  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: balanced
  • Power Dissipation (Max): 2.3W (Ta), 89W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 16A (Ta), 59A (Tc)
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 17nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 5.6 mOhm @ 16A, 10V
  • Package: Reel - TR
  • Mounting: SMD (SMT)

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21+ $5.5313 $116.1573
33+ $5.3580 $176.8140
45+ $5.1848 $233.3160
58+ $5.0127 $290.7366
78+ $4.4941 $350.5398
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Availability: 1,850 pieces
MOQ: 9 pcs
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