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Same model may have multiple batches, images only for reference.
NE68019-T1-A Real Image
Same model may have multiple batches, images only for reference.

NE68019-T1-A

Part No NE68019-T1-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description RF TRANSISTOR NPN SOT-523
Datasheet
NE68019-T1-A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 10V
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 1.9dB @ 2GHz
Gain 9.6dB
Maximum Power Dissipation 100mW
Typical Gain (hFE) (Min) 80 @ 5mA, 3V
Maximum Current Collector 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-523
Win Source Part Number 1082915-NE68019-T1-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NE68019-T1-A CAD Model

Description

This NE68019-T1-A transistor is obsolete (EOL) manufactured by CEL with a gain of 9.6dB and a frequency transition of 10GHz.

  • Status: Obsolete (EOL)
  • Gain: 9.6dB
  • Frequency Transition: 10GHz
  • Transistor Polarity: NPN
  • Noise Figure: 1.9dB @ 2GHz
  • Mounting Technology: SMD (SMT)
  • Maximum Current Collector: 35mA
  • Collector-Emitter Breakdown Voltage: 10V
  • Typical Gain (hFE) (Min): 80 @ 5mA, 3V
  • Maximum Power Dissipation: 100mW

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