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NE68133-T1B-R34-A

Part No NE68133-T1B-R34-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description RF TRANSISTOR NPN SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 10V
Frequency - Transition 9GHz
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
Gain 13dB
Maximum Power Dissipation 200mW
Typical Gain (hFE) (Min) 80 @ 20mA, 8V
Maximum Current Collector 65mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Win Source Part Number 1024267-NE68133-T1B-R34-A
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NE68133-T1B-R34-A CAD Model

Description

The CEL 1024267-NE68133-T1B-R34-A is an NPN transistor with a gain of 13dB and a frequency transition of 9GHz.

  • Gain: 13dB
  • Frequency Transition: 9GHz
  • Noise Figure: 1.2dB @ 1GHz
  • Maximum Current Collector: 65mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
  • Typical Gain (hFE) (Min): 80 @ 20mA, 8V
  • Case/Package: SOT-23
  • Maximum Power Dissipation: 200mW

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