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Same model may have multiple batches, images only for reference.
NE685M33-T3-A
Same model may have multiple batches, images only for reference.

NE685M33-T3-A

Part No NE685M33-T3-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description TRANSISTOR NPN 2GHZ M33
Datasheet
NE685M33-T3-A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 6V
Frequency - Transition 12GHz
Noise Figure (dB Typ @ f) 1.5dB to 2.5dB @ 2GHz
Maximum Power Dissipation 130mW
Typical Gain (hFE) (Min) 75 @ 10mA, 3V
Maximum Current Collector 30mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-SuperMiniMold (M33)
Win Source Part Number 1082925-NE685M33-T3-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NE685M33-T3-A CAD Model

Description

The NE685M33-T3-A from CEL is an NPN transistor with a maximum collector-emitter breakdown voltage of 6V and a maximum current collector of 30mA.

  • Frequency Transition: 12GHz
  • Typical Gain (hFE): 75 @ 10mA, 3V
  • Noise Figure: 1.5dB to 2.5dB @ 2GHz
  • Maximum Power Dissipation: 130mW
  • Mounting: 3-SuperMiniMold (M33)
  • Temperature Range: 150°C (TJ)
  • Application: discrete semiconductor products
  • Alternative Parts: B340A-13-F, CMSH3-40MA BK Lead Free

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