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NE85630-T1-A

Part No NE85630-T1-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description RF TRANSISTOR NPN SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 4.5GHz
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
Gain 9dB
Maximum Power Dissipation 150mW
Typical Gain (hFE) (Min) 40 @ 7mA, 3V
Maximum Current Collector 100mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Win Source Part Number 115824-NE85630-T1-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NE85630-T1-A CAD Model

Description

This electronic component is a NPN transistor manufactured by CEL.

  • GPTDescription: It has a part number of NE85630-T1-A and a gain of 9dB.
  • GPTDescription: The frequency transition is 4.5GHz and the noise figure (dB Typ @ f) is 1.2dB @ 1GHz.
  • GPTDescription: It comes in a SOT-323 case/package and the maximum current collector is 100mA.
  • GPTDescription: The VCEO maximum collector-emitter breakdown voltage is 12V and the typical gain (hFE) (Min) is 40 @ 7mA, 3V.
  • GPTDescription: The maximum power dissipation is 150mW and the temperature range for operating is 150°C (TJ).
  • GPTDescription: The supply and demand status is balanced.

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