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Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Bulk
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 2.3V
Frequency - Transition 60GHz
Noise Figure (dB Typ @ f) 0.9dB to 1.1dB @ 2GHz
Gain 16dB
Maximum Power Dissipation 80mW
Typical Gain (hFE) (Min) 200 @ 5mA, 2V
Maximum Current Collector 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package M04
Win Source Part Number 1082945-NESG2030M04-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NESG2030M04-A CAD Model

Description

The NESG2030M04-A is a high-frequency NPN transistor from CEL that operates in the frequency range of 60GHz.

  • Gain: 16dB
  • Noise Figure: 0.9dB to 1.1dB @ 2GHz
  • Maximum Collector-Emitter Breakdown Voltage: 2.3V
  • Maximum Power Dissipation: 80mW
  • Package: M04 case
  • Commonly Used: discrete semiconductor products
  • Status: obsolete

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