The 2N6075 is a silicon NPN Darlington transistor manufactured by Central Semiconductor Corp. This transistor is designed for high-gain amplifier and switching applications. It is known for its exceptional current gain and sensitivity.

Applications

• High-gain amplifier circuits
• Switching circuits
• Solenoid drivers
• Relay drivers
• Motor control

Features

• NPN Darlington Transistor
• Extremely High DC Current Gain (hFE)
• Low Saturation Voltage
• High Collector-Emitter Breakdown Voltage (VCEO)
• RoHS Compliant

Benefits

• Provides exceptionally high current gain, simplifying circuit design.
• Enables efficient switching with minimal power loss.
• Suitable for driving high-current loads like solenoids and relays.
• Offers reliable performance under varying operating conditions.

Technical Specifications

The 2N6075 features a Collector-Emitter Breakdown Voltage (VCEO) of typically 60V. The Collector Current (IC) is rated at 1A. The DC Current Gain (hFE) is typically in the range of 1000 to 4000, depending on operating conditions. The operating and storage temperature range is typically from -65°C to +150°C.

It is typically packaged in a TO-220 package.