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Same model may have multiple batches, images only for reference.
BDV65A Mospec
Same model may have multiple batches, images only for reference.

BDV65A

Part No BDV65A
Manufacturer Central Semiconductor Corp
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 12A TO218
Datasheet
BDV65A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Central Semiconductor Corp
Package Bulk
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 12 A
Voltage - Collector Emitter Breakdown (Max) 80 V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 4V
Power - Max 125 W
Frequency - Transition 60MHz
Mounting Type Through Hole
Package / Case TO-218-3
Supplier Device Package TO-218
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 570294-BDV65A
Ultra Librarian 3D Model Ultra Librarian BDV65A CAD Model

Description

The BDV65A is an NPN bipolar transistor from Central Semiconductor Corp.

  • Type: NPN Bipolar Transistor
  • Application: General-Purpose Switching and Amplification
  • Maximum Power Dissipation: 125W
  • Maximum Collector-Emitter Voltage Breakdown: 80V
  • Maximum Collector Current: 12A
  • DC Current Gain (hFE): 1000 @ 5A and 4V Collector-Emitter Voltage
  • Mounting Technology: Through-Hole
  • Package: TO-218-3
  • Transition Frequency: 60MHz
  • Suitable For: High-Frequency Applications such as RF Amplifiers and Oscillators

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