The STF26NM60N-H is a high-performance N-channel Power MOSFET from the industry-leading manufacturer, STMicroelectronics. This product is designed to deliver the efficiency and reliability needed for a wide array of power applications. With a drain-source voltage (V<sub>DS) of 600V and a continuous drain current (I<sub>D) of 20A, the STF26NM60N-H is capable of handling high power densities while maintaining a low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses.

Key Features

• V<sub>DS @ T<sub>jmax: 600V, ensuring robust performance for high-voltage applications.
• R<sub>DS(on): Low on-state resistance for improved efficiency and thermal performance.
• I<sub>D: 20A continuous drain current enables the device to handle significant power.
• Fast switching speed: Enhances performance in switching applications and reduces switching losses.
• 100% avalanche tested: Guarantees reliable operation even under extreme conditions.
• High dv/dt capability: Suitable for fast-switching and high-frequency applications.

Applications

The STF26NM60N-H MOSFET is ideal for a variety of applications, including but not limited to:

• Switch Mode Power Supplies (SMPS)
• High Efficiency DC/DC Converters
• Power Factor Correction (PFC) circuits
• LED Lighting solutions
• Motor Drives and Inverters

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STF26NM60N-H MOSFET is produced using state-of-the-art manufacturing processes and is subjected to rigorous testing to ensure optimal performance and longevity. This device is a testament to STMicroelectronics' dedication to providing innovative semiconductor solutions that power electronics across a multitude of industries.