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PMDPB38UNE,115

Part No PMDPB38UNE,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 4A HUSON6 / Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Maximum) @ Id, Vgs 46 mOhm @ 3A, 4.5V
Vgs(th) (Maximum) @ Id 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 4.4nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 268pF @ 10V
Power - Max 510mW
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 6-UDFN Exposed Pad
Manufacturer Package DFN2020-6
Win Source Part Number 792425-PMDPB38UNE,115
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Family Name PMDPB38UNE
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian PMDPB38UNE,115 CAD Model

Description

The PMDPB38UNE,115 is a state-of-the-art MOSFET transistor designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This product is known for its high efficiency and reliability, making it an ideal choice for a wide range of electronic applications.

Key Features

  • Low On-State Resistance: The PMDPB38UNE,115 boasts an exceptionally low on-state resistance (R<sub>DS(on)), which ensures minimal power loss and heat generation during operation, leading to higher efficiency and longer life for electronic components.
  • High-Speed Switching: Designed for high-speed switching applications, this MOSFET provides rapid transition performance, which is crucial for power management and conversion systems.
  • Compact Design: The PMDPB38UNE,115 comes in a small and compact package, making it suitable for space-constrained applications without compromising on power and performance.
  • Low Threshold Voltage: It features a low threshold voltage that allows for easy drive capability and is suitable for low voltage applications.

Applications

This MOSFET is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Power management circuits
  • Battery-powered devices
  • Motor control systems
  • Load switching
  • High-efficiency power supplies

Product Specifications

Parameter Value Package DFN2020-6 (SOT1118) Drain-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 8A Power Dissipation (P<sub>D) 1.4W Operating Temperature -55°C to +150°C

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PMDPB38UNE,115 is no exception, with rigorous testing and quality control measures in place to ensure consistent performance and durability for the end user.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8870 $62.0900
160+ $0.7277 $116.4320
250+ $0.7046 $176.1500
340+ $0.6826 $232.0840
440+ $0.6595 $290.1800
590+ $0.5914 $348.9260
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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