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CXTA27

Part No CXTA27
Manufacturer Central Semiconductor Corp
Catalog Transistors (BJT) - Single
Description SURFACE MOUNT NPN DARLINGTON TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Manufacturer Central Semiconductor Corp
Win Source Part Number 1163912-CXTA27
Manufacturer Homepage www.centralsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CXTA27 CAD Model

Description

The CXTA27 is a silicon planar epitaxial NPN transistor manufactured by Central Semiconductor Corp. It is designed for use in general purpose amplifier and switching applications. This transistor is typically supplied in a SOT-23 surface mount package.

Applications

  • General Purpose Amplification: Used in audio amplifiers, signal amplifiers, and instrumentation amplifiers.
  • Switching Circuits: Employed in switching power supplies, digital logic circuits, and relay drivers.
  • Oscillators: Integrated into oscillator circuits for generating specific frequencies.
  • Small Signal Amplification: Designed for amplifying weak signals in communication and control systems.
  • Driver Stages: Used as a driver for larger transistors or other components.

Features

  • NPN Polarity: An NPN bipolar junction transistor.
  • Low Saturation Voltage: Minimizes power loss in switching applications.
  • High Current Gain (hFE): Provides efficient amplification of signals.
  • Surface Mount Package (SOT-23): Facilitates automated assembly and compact circuit design.
  • Halogen Free: Environmentally friendly construction.

Benefits

  • Efficient Amplification: High current gain ensures effective signal amplification.
  • Fast Switching Speed: Enables high-speed switching operations in digital circuits.
  • Compact Design: SOT-23 package allows for high-density circuit layouts.
  • Reduced Power Consumption: Low saturation voltage minimizes power dissipation.
  • Reliable Performance: Provides stable and consistent operation across various conditions.

Additional Details

The CXTA27 has a collector-emitter voltage (VCEO) typically around 50V. The collector current (IC) rating is usually in the range of 500mA. The power dissipation is around 350mW. The operating and storage temperature range is commonly from -65°C to +150°C. The DC current gain (hFE) can vary, typically ranging from 100 to 300. This transistor is commonly used in various electronic devices due to its versatile characteristics and small size.

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