The MPSA66 is a silicon NPN Darlington transistor designed for high gain amplifier and switching applications. Manufactured by Central Semiconductor Corp, this transistor offers a high DC current gain, making it suitable for circuits where a small input current can control a larger output current.

Applications

• High-gain amplification
• Switching circuits
• Relay drivers
• Solenoid drivers
• General-purpose amplification

Features

• High DC Current Gain (hFE): Typically 10,000 at IC = 100mA
• Low Saturation Voltage: Allows efficient switching performance.
• NPN Darlington Transistor: Provides very high current gain.
• Collector-Emitter Voltage (VCEO): 30V
• Collector Current (IC): 500mA

Benefits

• Increased sensitivity in amplifier circuits due to high gain.
• Efficient switching due to low saturation voltage.
• Simplified circuit design in high current applications.
• Reduced component count due to Darlington configuration.

Technical Specifications

The MPSA66 is a silicon NPN Darlington transistor. It has a collector-emitter voltage (VCEO) of 30V and a collector current (IC) of 500mA. The typical DC current gain (hFE) is 10,000 at a collector current of 100mA. It is commonly available in a TO-92 package.