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CED01N65A

Part No CED01N65A
Manufacturer Chino-Excel
Catalog END - OF - LIFE
Description N-Channel Enhancement Mode Field Effect Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Chino-Excel
Win Source Part Number 1161012-CED01N65A
Manufacturer Homepage www.cetsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian CED01N65A CAD Model

Description

The CED01N65A is a Power MOSFET from Chino-Excel. It is designed for high-voltage, high-speed switching applications. This MOSFET offers efficient performance and robust design for various power electronics applications.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • Uninterruptible Power Supplies (UPS)
  • DC-DC converters
  • Motor control circuits

Features:

  • High Voltage: 650V drain-source voltage (Vds)
  • Low On-Resistance: Minimizes conduction losses
  • Fast Switching Speed: Enables efficient operation in high-frequency circuits
  • Avalanche Rated: Provides robustness against voltage transients
  • Gate Threshold Voltage: Suitable for various driving voltages

Benefits:

  • Improved Efficiency: Low on-resistance reduces power dissipation, enhancing overall system efficiency.
  • Reliable Performance: Avalanche rating and robust design ensure stable operation under demanding conditions.
  • Simplified Design: Fast switching speed allows for smaller and more cost-effective components.
  • Enhanced Thermal Performance: Optimized package design facilitates efficient heat dissipation.
  • Reduced EMI: Fast switching characteristics contribute to lower electromagnetic interference.

Technical Specifications:

The CED01N65A typically features a drain-source voltage (Vds) of 650V, a gate-source voltage (Vgs) of ±30V, and a continuous drain current (Id) that varies depending on the case temperature and package. The on-resistance (Rds(on)) is typically very low to minimize conduction losses. It's packaged in a standard TO-220 or similar package for easy mounting and heat dissipation. Detailed specifications can be found in the datasheet, which includes parameters like input capacitance, output capacitance, and gate charge.

This MOSFET is designed for applications where efficiency, reliability, and fast switching are crucial. Its high voltage rating and low on-resistance make it an excellent choice for modern power electronics designs. Always refer to the datasheet for specific operating conditions and design considerations to ensure optimal performance and longevity in your application.

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