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BC413C

Part No BC413C
Manufacturer Continental Device India Limited
Catalog END - OF - LIFE
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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Rohs State rohs
ECAD Module
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Manufacturer Continental Device India Limited
Win Source Part Number 1151919-BC413C
Manufacturer Homepage www.cdilsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BC413C CAD Model

Description

The BC413C is a silicon NPN bipolar junction transistor (BJT) manufactured by Continental Device India Limited (CDIL). It's designed for general-purpose amplification and switching applications. The transistor is housed in a through-hole package, making it easy to use in breadboarding and prototyping.

Applications

  • General-Purpose Amplification
  • Switching Circuits
  • Audio Amplifiers
  • Signal Processing
  • Oscillator Circuits

Features

  • NPN Transistor Type
  • High Current Gain (hFE)
  • Low Saturation Voltage
  • Through-Hole Package (TO-92)
  • RoHS Compliant

Benefits

  • Versatile component for various electronic circuits
  • High gain for effective signal amplification
  • Low saturation voltage for efficient switching
  • Easy to mount and solder in through-hole applications
  • Environmentally friendly due to RoHS compliance

Technical Specifications

The BC413C features a collector-emitter breakdown voltage (VCEO) of 30V and a continuous collector current (IC) of 200mA. The DC current gain (hFE) typically ranges from 200 to 450. The saturation voltage (VCE(sat)) is typically 0.25V at an IC of 100mA. It has a power dissipation of 500mW. The transistor is supplied in a TO-92 package. The operating junction temperature range is -55°C to +150°C. The transition frequency (fT) is typically 150 MHz. This makes the BC413C suitable for amplifying and switching signals in a wide range of electronic devices.

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