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C3M0075120J-TR

Part No C3M0075120J-TR
Manufacturer Cree/Wolfspeed
Catalog OEM Souring
Description SICFET N-CH 1200V
Sample
Rohs State rohs
ECAD Module
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Category OEM Souring
Win Source Part Number 1463756-C3M0075120J-TR
Manufacturer Cree/Wolfspeed
Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 1000 V
Power Dissipation (Max) 113.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Ultra Librarian 3D Model Ultra Librarian C3M0075120J-TR CAD Model

Description

The C3M0075120J-TR by Wolfspeed is a cutting-edge SiC (Silicon Carbide) FET (Field-Effect Transistor) designed for high efficiency and power density with a 1200V N-channel. This semiconductor device is at the forefront of power electronics, catering to a wide range of applications demanding high voltage and high-temperature operations, such as power converters, motor drives, and charging stations for electric vehicles. The 'TR' suffix signifies that this model is provided in a tape and reel packaging, suitable for automated assembly lines, ensuring high reliability and consistency in production. Silicon Carbide technology provides several advantages over traditional silicon in power applications, including higher efficiency, faster switching speeds, and improved thermal performance. These features make the C3M0075120J-TR an ideal choice for applications looking to push the boundaries of power density and efficiency.

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