C3M0120065K

Part No C3M0120065K
Manufacturer Cree/Wolfspeed
Catalog FETs - Single
Description 650V 120M SIC MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202975-C3M0120065K
Manufacturer Wolfspeed, Inc.
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series C3M™
Package Tube
Product Status Active
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
FET Type N-Channel
Rds On (Max) @ Id, Vgs 157mOhm @ 6.76A, 15V
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Ultra Librarian 3D Model   Symbol, Footprint, 3D Model

Description

The N-Channel MOSFET is a high-performance discrete semiconductor device designed for power switching applications. Manufactured by Wolfspeed, Inc., this MOSFET belongs to the Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs category. It is part of the C3M™ series, which utilizes Silicon Carbide (SiC) technology for enhanced performance. With a drain to source voltage (Vdss) of 650V, it can handle high voltage applications. The on-resistance (Rds On) is 157mOhm at 6.76A and 15V gate-source voltage, ensuring low power dissipation. The operating temperature range is -40°C to 175°C (TJ), making it suitable for various industrial applications. This product is currently active and widely used in power switching applications.

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